ERA-3 - TRANSISTOR DE RF,E3 Mini-Circuits ERA3SM, MONOLITHIC 0 MHz - 3000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER

R$ 125,00

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Informações do Produto


Monolithic Amplifier
Page 1 of 4
Product Features
• DC-3 GHz
• Single voltage supply
• Internally matched to 50 ohms
• Unconditionally stable
• Low performance variation over temperature
• Transient protected
• Aqueous washable
• Protected By US Patent 6,943,629
Typical Applications
• Cellular/ PCS/ 3G Base Station
• CATV, Cable Modem & DBS
• Fixed Wireless & WLAN
• Microwave Radio & Test Equipment
simplified schematic and pin description
Function Pin Number Description
RF IN 1
RF input pin. This pin requires the use of an external DC blocking capacitor chosen
for the frequency of operation.
RF-OUT and DC-IN 3
RF output and bias pin. DC voltage is present on this pin; therefore a DC blocking
capacitor is necessary for proper operation. An RF choke is needed to feed DC bias
without loss of RF signal due to the bias connection, as shown in “Recommended
Application Circuit”.
GND 2,4
Connections to ground. Use via holes as shown in “Suggested Layout for PCB
Design” to reduce ground path inductance for best performance.
General Description
ERA-3+ (RoHS compliant) is a wideband amplifier offering high dynamic range. It has repeatable performance from lot to lot. It is enclosed in a Micro-X package. ERA-3+ uses Darlington configuration and is
fabricated using InGaP HBT technology. Expected MTBF is 10,000 years at 85°C case temperature.
GROUND
RF IN
RF-OUT and DC-IN
REV. M
M131511
ERA-3+
120615
DC-3 GHz